Detailed Information
Cited 0 time in 
Cited 0 time in 
Cited 0 time in
Metadata Downloads
Analysis of recombination mechanisms in InGaN-based light-emitting diodes from electrical and optical characterizations
- Authors
- Shin, Dong Soo
- Issue Date
- Nov-2014
- Publisher
- ACP
- Citation
- Asia Communications and Photonics Conference, ACP, v.2014-November, pp.1 - 3
- Indexed
- SCOPUS
- Journal Title
- Asia Communications and Photonics Conference, ACP
- Volume
- 2014-November
- Start Page
- 1
- End Page
- 3
- ISSN
- 2162-108X
- Abstract
- Various techniques that can give useful information on the nonradiative recombination mechanisms in InGaN-based light-emitting diodes are discussed. Characterization techniques range from the simple current-voltage and light-current measurements to more sophisticated temperature-dependent methods. © OSA 2014
- Files in This Item
- Go to Link
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.
Related Researcher
- Shin, Dong Soo
- COLLEGE OF SCIENCE AND CONVERGENCE TECHNOLOGY (DEPARTMENT OF PHOTONICS AND NANOELECTRONICS)