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Single-Scan Monochromatic Photonic Capacitance-Voltage Technique for Extraction of Subgap DOS Over the Bandgap in Amorphous Semiconductor TFTs
- Authors
- Bae, Hagyoul; Choi, Hyunjun; Jun, Sungwoo; Jo, Chunhyung; Kim, Yun Hyeok; Hwang, Jun Seok; Ahn, Jaeyeop; Oh, Saeroonter; Bae, Jong-Uk; Choi, Sung-Jin; Kim, Dae Hwan; Kim, Dong Myong
- Issue Date
- Dec-2013
- Publisher
- IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
- Keywords
- Acceptor-like states; amorphous; density of states (DOS); donor-like states; extraction; photonic capacitance; thin-film transistors (TFT)
- Citation
- IEEE ELECTRON DEVICE LETTERS, v.34, no.12, pp.1524 - 1526
- Indexed
- SCIE
SCOPUS
- Journal Title
- IEEE ELECTRON DEVICE LETTERS
- Volume
- 34
- Number
- 12
- Start Page
- 1524
- End Page
- 1526
- ISSN
- 0741-3106
- Abstract
- We report a novel technique for simultaneous extraction of subgap donor-and acceptor-like density of states [g(D)(E) and g(A)(E)] over the subgap energy range (E-V<E<E-C) using a single-scan monochromatic photonic capacitance-voltage technique in n-channel amorphous indium-gallium-zinc-oxide thin-film transistors. In the proposed technique, we applied two different equivalent circuit models for the photoresponsive carriers excited from g(D)(E) and g(A)(E) under depletion (V-GS<V-FB) and accumulation (V-GS < V-FB) bias by employing a sub-bandgap optical source that includes a relation between photon energy (E-ph) and bandgap energy (E-g) as h nu = E-ph < E-g.
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