The impact of diamond conditioners on scratch formation during chemical mechanical planarization (CMP) of silicon dioxide
- Authors
- Kwon, Tae-Young; Ramachandran, Manivannan; Cho, Byoung-Jun; Busnaina, Ahmed A.; Park, Jin-Goo
- Issue Date
- Nov-2013
- Publisher
- Pergamon Press Ltd.
- Keywords
- CMP; Diamond conditioner; Scratch; Pad debris
- Citation
- Tribology International, v.67, pp.272 - 277
- Indexed
- SCIE
SCOPUS
- Journal Title
- Tribology International
- Volume
- 67
- Start Page
- 272
- End Page
- 277
- URI
- https://scholarworks.bwise.kr/erica/handle/2021.sw.erica/26672
- DOI
- 10.1016/j.triboint.2013.08.008
- ISSN
- 0301-679X
- Abstract
- The effects of pad surface roughness and debris induced by various types of diamond conditioners during the chemical mechanical planarization (CMP) process and their scratch forming behaviors were evaluated. Five types of conditioners having different grade numbers and densities were used to condition the polyurethane pads. When conditioned using low-density and sharp diamond conditioners, the roughness and wear rate of the pads were found to be higher with higher removal rates. The scratch generation behavior showed a similar trend to that of the removal rate. Additionally, the scratch formation was evaluated through the in-situ/ex-situ pad conditioning. Based on in-situ/ex-situ pad conditioning experiments, it was found that ex-situ pad conditioning process resulted in lower removal rate with lesser number of scratches. (C) 2013 Elsevier Ltd. All rights reserved.
- Files in This Item
-
Go to Link
- Appears in
Collections - COLLEGE OF ENGINEERING SCIENCES > DEPARTMENT OF MATERIALS SCIENCE AND CHEMICAL ENGINEERING > 1. Journal Articles
![qrcode](https://api.qrserver.com/v1/create-qr-code/?size=55x55&data=https://scholarworks.bwise.kr/erica/handle/2021.sw.erica/26672)
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.