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Forming process of unipolar resistance switching in Ta2O5-x thin films
- Authors
- Lee, Shin Buhm; Yoo, Hyang Keun; Kang, Bo Soo
- Issue Date
- Sep-2013
- Publisher
- ELSEVIER SCIENCE BV
- Keywords
- Dielectric breakdown; Resistance random-access memory (RRAM); Resistance switching
- Citation
- CURRENT APPLIED PHYSICS, v.13, no.7, pp.1172 - 1174
- Indexed
- SCIE
SCOPUS
KCI
- Journal Title
- CURRENT APPLIED PHYSICS
- Volume
- 13
- Number
- 7
- Start Page
- 1172
- End Page
- 1174
- ISSN
- 1567-1739
- Abstract
- We investigated the film-thickness and ambient oxygen-pressure dependence of the electric field, E-F, required to initiate unipolar resistance switching (URS) in Ta2O5-x thin films. We measured the dependence of E-F by applying a triangular-waveform voltage signal to the film over a wide sweep-rate range (v = 20 mV s(-1) to 5 MV s(-1)). Our results showed that the URS-E-F was not influenced by the Ta2O5-x film thickness nor ambient oxygen-pressure. This suggested that the URS-forming process in Ta2O5-x thin films should be governed by thermally assisted dielectric breakdown in our measurement range. (c) 2013 Elsevier B.V. All rights reserved.
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Related Researcher
- Kang, Bo Soo
- COLLEGE OF SCIENCE AND CONVERGENCE TECHNOLOGY (DEPARTMENT OF APPLIED PHYSICS)