Electroluminescence from h-BN by using Al2O3/h-BN multiple heterostructureopen access
- Authors
- Lee, Seung Hee; Jeong, Hokyeong; Kim, Dong Yeong; Seo, Seung-Young; Han, Cheolhee; Okello, Odongo Francis Ngome; Lo, Jen-Iu; Peng, Yu-Chain; Oh, Chan-Hyoung; Lee, Gyeong Won; Shim, Jong-In; Cheng, Bing-Ming; Song, Kyung; Choi, Si-Yong; Jo, Moon-Ho; Kim, Jong Kyu
- Issue Date
- Jul-2019
- Publisher
- Optical Society of America
- Citation
- Optics Express, v.27, no.14, pp.19692 - 19701
- Indexed
- SCIE
SCOPUS
- Journal Title
- Optics Express
- Volume
- 27
- Number
- 14
- Start Page
- 19692
- End Page
- 19701
- URI
- https://scholarworks.bwise.kr/erica/handle/2021.sw.erica/2754
- DOI
- 10.1364/OE.27.019692
- ISSN
- 1094-4087
- Abstract
- Two-dimensional (2-D) hexagonal boron nitride (h-BN) has attracted considerable attention for deep ultraviolet optoelectronics and visible single photon sources, however, realization of an electrically-driven light emitter remains challenging due to its wide bandgap nature. Here, we report electrically-driven visible light emission with a red-shift under increasing electric field from a few layer h-BN by employing a five-period Al2O3/h-BN multiple heterostructure and a graphene top electrode. Investigation of electrical properties reveals that the Al2O3 layers act as potential barriers confining injected carriers within the h-BN wells, while suppressing the electrostatic breakdown by trap-assisted tunneling, to increase the probability of radiative recombination. The result highlights a promising potential of such multiple heterostructure as a practical and efficient platform for electrically-driven light emitters based on wide bandgap two-dimensional materials. (c) 2019 Optical Society of America under the terms of the OSA Open Access Publishing Agreement
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Collections - COLLEGE OF SCIENCE AND CONVERGENCE TECHNOLOGY > DEPARTMENT OF PHOTONICS AND NANOELECTRONICS > 1. Journal Articles
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