Controlling Work Function and Damaging Effects of Sputtered RuO2 Gate Electrodes by Changing Oxygen Gas Ratio during Sputtering
- Authors
- Kim, Hyo Kyeom; Yu, Il-Hyuk; Lee, Jae Ho; Park, Tae Joo; Hwang, Cheol Seong
- Issue Date
- Feb-2013
- Publisher
- American Chemical Society
- Keywords
- ruthenium oxide; sputtering; metal gate; effective work function; oxygen ratio; high-k gate dielectric
- Citation
- ACS Applied Materials and Interfaces, v.5, no.4, pp.1327 - 1332
- Indexed
- SCIE
SCOPUS
- Journal Title
- ACS Applied Materials and Interfaces
- Volume
- 5
- Number
- 4
- Start Page
- 1327
- End Page
- 1332
- URI
- https://scholarworks.bwise.kr/erica/handle/2021.sw.erica/28833
- DOI
- 10.1021/am302604e
- ISSN
- 1944-8244
- Abstract
- RuO2 metal gates were fabricated by a reactive sputtering method under different O-2 gas ratios. For the given sputtering power of 60 W, a similar to 13% O-2 ratio was the critical level below or over which RuO2 film has hyperstoichiometric and stoichiometric compositions, which resulted in a difference in the effective work function by similar to 0.2 eV. The stoichiometric RuO2 film imposes almost no damaging effect to the underlying SiO2 and HfO2 gate dielectrics. The RuO2 gate decreased the equivalent oxide thickness by similar to 0.5 nm and leakage current by around two orders of magnitude compared to the Pt-gated samples.
- Files in This Item
-
Go to Link
- Appears in
Collections - COLLEGE OF ENGINEERING SCIENCES > DEPARTMENT OF MATERIALS SCIENCE AND CHEMICAL ENGINEERING > 1. Journal Articles
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.