Pulased IVT Characteristics of AlGaN/GaN HEMT on the Isothermal Conditions

Abstract

Wide band-gap dcvices have received much attention for high-frequency and high-power applicarions. Among them, AlGaN/GaN HEMTs have great potential, because of the material advantages such as high breakdown voltage, high electron mobility and high electorn density. But there are still some issues on lGaN/GaN HEMTs, such as current collapse, self- heating effect considering the bias power condition. So in this paper, we have studied self-heating effect using pulsed IV asd IVT measurement in the same bias power condetion- isothermal condition.