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Droop Studies for High-Performance InGaN Blue Light-Emitting Diodes
- Issue Date
- Jun-2013
- Publisher
- IEEE
- Keywords
- Photonics and Electrooptics; Light emitting diodes; Radiative recombination; Charge carrier density; Electroluminescence; Shape
- Citation
- 2013 CONFERENCE ON LASERS AND ELECTRO-OPTICS PACIFIC RIM (CLEO-PR), pp.1 - 2
- Indexed
- OTHER
- Journal Title
- 2013 CONFERENCE ON LASERS AND ELECTRO-OPTICS PACIFIC RIM (CLEO-PR)
- Start Page
- 1
- End Page
- 2
- Abstract
- An origin of the efficiency droop has been suggested as the saturation of the radiative recombination rate in InGaN quantum well at low current and subsequent increase in the nonradiative recombination rates at high current.
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Related Researcher
- Shin, Dong Soo
- COLLEGE OF SCIENCE AND CONVERGENCE TECHNOLOGY (DEPARTMENT OF PHOTONICS AND NANOELECTRONICS)