Investigation for Resistive Switching by Controlling Overflow Current in Resistance Change Nonvolatile Memory
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Ahn, Seung-Eon | - |
dc.contributor.author | Lee, Myoung-Jae | - |
dc.contributor.author | Kang, Bo Soo | - |
dc.contributor.author | Lee, Dongsoo | - |
dc.contributor.author | Kim, Chang-Jung | - |
dc.contributor.author | Kim, Dong-Sik | - |
dc.contributor.author | Chung, U-In | - |
dc.date.accessioned | 2021-06-23T06:06:43Z | - |
dc.date.available | 2021-06-23T06:06:43Z | - |
dc.date.created | 2021-01-21 | - |
dc.date.issued | 2012-11 | - |
dc.identifier.issn | 1536-125X | - |
dc.identifier.uri | https://scholarworks.bwise.kr/erica/handle/2021.sw.erica/31439 | - |
dc.description.abstract | In recent years, resistance changes random access memory (RRAM) which shows reversible bistable resistance states by applied voltage has been studied as one of the alternatives of next-generation nonvolatile memory due to its excellent device characteristics including scalability, speed, and retention. Here, we report on the noncharge-based NiO RRAM device characteristics with load resistor as well as the simulation results of controlled conducting filament configuration. The RRAM device with load resistor showed super performances including highly reduction of switching current (similar to 1 order) and significantly improved switching voltage distribution (30% reduction). | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC | - |
dc.title | Investigation for Resistive Switching by Controlling Overflow Current in Resistance Change Nonvolatile Memory | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Kang, Bo Soo | - |
dc.identifier.doi | 10.1109/TNANO.2012.2214788 | - |
dc.identifier.scopusid | 2-s2.0-84870287420 | - |
dc.identifier.wosid | 000311701300011 | - |
dc.identifier.bibliographicCitation | IEEE TRANSACTIONS ON NANOTECHNOLOGY, v.11, no.6, pp.1122 - 1125 | - |
dc.relation.isPartOf | IEEE TRANSACTIONS ON NANOTECHNOLOGY | - |
dc.citation.title | IEEE TRANSACTIONS ON NANOTECHNOLOGY | - |
dc.citation.volume | 11 | - |
dc.citation.number | 6 | - |
dc.citation.startPage | 1122 | - |
dc.citation.endPage | 1125 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Engineering | - |
dc.relation.journalResearchArea | Science & Technology - Other Topics | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
dc.relation.journalWebOfScienceCategory | Nanoscience & Nanotechnology | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordPlus | RANDOM-ACCESS MEMORY | - |
dc.subject.keywordAuthor | Nickel oxide | - |
dc.subject.keywordAuthor | nonvolatile memory | - |
dc.subject.keywordAuthor | resistance switching | - |
dc.identifier.url | https://ieeexplore.ieee.org/document/6279486 | - |
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.
55 Hanyangdeahak-ro, Sangnok-gu, Ansan, Gyeonggi-do, 15588, Korea+82-31-400-4269 sweetbrain@hanyang.ac.kr
COPYRIGHT © 2021 HANYANG UNIVERSITY. ALL RIGHTS RESERVED.
Certain data included herein are derived from the © Web of Science of Clarivate Analytics. All rights reserved.
You may not copy or re-distribute this material in whole or in part without the prior written consent of Clarivate Analytics.