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Investigation for Resistive Switching by Controlling Overflow Current in Resistance Change Nonvolatile Memory
- Authors
- Ahn, Seung-Eon; Lee, Myoung-Jae; Kang, Bo Soo; Lee, Dongsoo; Kim, Chang-Jung; Kim, Dong-Sik; Chung, U-In
- Issue Date
- Nov-2012
- Publisher
- IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
- Keywords
- Nickel oxide; nonvolatile memory; resistance switching
- Citation
- IEEE TRANSACTIONS ON NANOTECHNOLOGY, v.11, no.6, pp 1122 - 1125
- Pages
- 4
- Indexed
- SCI
SCIE
SCOPUS
- Journal Title
- IEEE TRANSACTIONS ON NANOTECHNOLOGY
- Volume
- 11
- Number
- 6
- Start Page
- 1122
- End Page
- 1125
- ISSN
- 1536-125X
1941-0085
- Abstract
- In recent years, resistance changes random access memory (RRAM) which shows reversible bistable resistance states by applied voltage has been studied as one of the alternatives of next-generation nonvolatile memory due to its excellent device characteristics including scalability, speed, and retention. Here, we report on the noncharge-based NiO RRAM device characteristics with load resistor as well as the simulation results of controlled conducting filament configuration. The RRAM device with load resistor showed super performances including highly reduction of switching current (similar to 1 order) and significantly improved switching voltage distribution (30% reduction).
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Related Researcher
- Kang, Bo Soo
- ERICA 첨단융합대학 (ERICA 지능정보양자공학전공)