Power 응용을 위한 AlGAN/GAN HFET의 대신호 모델링

Abstract

A bias-dependent large signal model is presented to characterize AlGaN/GaN HFET on sapphire by pulsed meassurements. Two nonlinear current sources and few additional parameters are used to model bias-dependence of the drain current. Results show that the method discussed in this letter can be applied to model the large signal behavior of AlGaN/GaN HFET's from DC to RF at any bias points