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Ferroelectric domain switching in the Si doped HfO2 capacitors depending on the annealing temperature
- Authors
- 강보수
- Issue Date
- 10-Dec-2019
- Place
- 라마다호텔 제주
- Conference Name
- The 11th International Conference on Advanced Materials and Deviecs
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Related Researcher
- Kang, Bo Soo
- ERICA 첨단융합대학 (ERICA 지능정보양자공학전공)