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Avoiding fatal damage to the top electrodes when forming unipolar resistance switching in nano-thick material systems

Authors
Lee, S. B.Kwon, D-HKim, K.Yoo, H. K.Sinn, S.Kim, M.Kahng, B.Kang, B. S.
Issue Date
Jun-2012
Publisher
IOP PUBLISHING LTD
Keywords
MEMORY; NANOFILAMENTS; HIGH-DENSITY
Citation
JOURNAL OF PHYSICS D-APPLIED PHYSICS, v.45, no.25, pp 1 - 7
Pages
7
Indexed
SCI
SCIE
SCOPUS
Journal Title
JOURNAL OF PHYSICS D-APPLIED PHYSICS
Volume
45
Number
25
Start Page
1
End Page
7
URI
https://scholarworks.bwise.kr/erica/handle/2021.sw.erica/32602
DOI
10.1088/0022-3727/45/25/255101
ISSN
0022-3727
1361-6463
Abstract
When forming unipolar resistance switching in material systems, fatal damage often occurs to the top electrodes of Pt/SrTiOx/Pt, Pt/TiOy/Pt and Pt/NiOz/Pt cells. To develop a means of overcoming this problem, we systematically investigated the forming process by applying triangular-and pulse-waveform voltage signals to the cells. By investigating the dependence on sweep rate of the triangular-waveform voltage signals and amplitude of the pulse-waveform voltage signals, we discovered that the forming process occurred by two different mechanisms, irrespective of the material: either a thermally assisted dielectric breakdown or a purely electrical dielectric breakdown. During the former process, the top electrodes remained clean, even though oxygen bubbles formed on them. We observed that the top electrodes were blown off only for the latter (electrical) breakdown as a result of the formation of many conducting channels. We were able to overcome the fatal damage to the top electrodes by modifying the forming process into the thermally assisted dielectric breakdown.
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ERICA 첨단융합대학 (ERICA 지능정보양자공학전공)
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