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Schottky diode with excellent performance for large integration density of crossbar resistive memory
- Authors
- Kim, Gun Hwan; Lee, Jong Ho; Han, Jeong Hwan; Song, Seul Ji; Seok, Jun Yeong; Yoon, Jung Ho; Yoon, Kyung Jean; Lee, Min Hwan; Park, Tae Joo; Hwang, Cheol Seong
- Issue Date
- May-2012
- Publisher
- American Institute of Physics
- Keywords
- EXTRACTION; RESISTANCE; NONVOLATILE MEMORY; PARAMETERS; ATOMIC LAYER DEPOSITION
- Citation
- Applied Physics Letters, v.100, no.21, pp 1 - 4
- Pages
- 4
- Indexed
- SCI
SCIE
SCOPUS
- Journal Title
- Applied Physics Letters
- Volume
- 100
- Number
- 21
- Start Page
- 1
- End Page
- 4
- ISSN
- 0003-6951
1077-3118
- Abstract
- A Schottky diode (SD) with Au/Pt/TiO2/Ti/Pt stacked structure were fabricated for its application to crossbar type resistive switching (RS) memory. The SDs showed a highly promising rectification ratio (similar to 2.4 x 10(6) @ +/- 2V) between forward and reverse state currents and a high forward current density (similar to 3 x 10(5) A/cm(2) @ 2 V), which is useful for highly integrated crossbar RS memory. The SD has local forward current conduction paths, which provides extremely scaled devices with an advantage. The minimization of interconnection line resistance is also important to provide sufficient current to achieve stable operation of RS memory. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4722784]
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Related Researcher
- Park, Tae Joo
- ERICA 첨단융합대학 (ERICA 신소재·반도체공학전공)