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A Two-Mask Process for Fabrication of Bottom-Gate IGZO-Based TFTs
- Authors
- Uhm, Hyun-Seok; Lee, Sang-Hyuk; Kim, Won; Park, Jin-Seok
- Issue Date
- Apr-2012
- Publisher
- IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
- Keywords
- Gray-tone mask (GTM); transparent-oxide thin-film transistor (TFT); two-mask process
- Citation
- IEEE ELECTRON DEVICE LETTERS, v.33, no.4, pp 543 - 545
- Pages
- 3
- Indexed
- SCI
SCIE
SCOPUS
- Journal Title
- IEEE ELECTRON DEVICE LETTERS
- Volume
- 33
- Number
- 4
- Start Page
- 543
- End Page
- 545
- ISSN
- 0741-3106
1558-0563
- Abstract
- A simple process is presented with which a bottom-gate-type oxide thin-film transistor (TFT) can be fabricated by using two photomasks. The active channel, the source-drain electrode, and the pixel electrode layers were simultaneously formed via a single photolithography using a gray-tone mask (GTM). In particular, the gray-tone profiles of the photoresist were carefully observed to ensure process feasibility with the GTM. From the transparent-oxide TFTs fabricated in this letter, functional indices, such as threshold voltage V-T = 4.13 V (at V-DS = 10 V), subthreshold swing S = 0.59 V/dec, field-effect mobility mu(FE) = 12.41 cm(2)/V.s, ON-OFF current ratio lesser than 8 x 10(6), and transmittance higher than 85%, were obtained.
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Related Researcher
- PARK, JIN SEOK
- ERICA 공학대학 (SCHOOL OF ELECTRICAL ENGINEERING)