Switching dynamics and modeling of multi-domain Zr-Doped HfO2 ferroelectric thin films
- Authors
- Noh, Youngji; Jung, Moonyoung; Yoon, Jungkyu; Hong, Seunghyeon; Park, Sanghyun; Kang, Bo Soo; Ahn, Seung-Eon
- Issue Date
- Apr-2019
- Publisher
- ELSEVIER SCIENCE BV
- Keywords
- Ferroelectric; Switching dynamics; HfO2; Polarization-electric field curve
- Citation
- CURRENT APPLIED PHYSICS, v.19, no.4, pp.486 - 490
- Indexed
- SCIE
SCOPUS
KCI
- Journal Title
- CURRENT APPLIED PHYSICS
- Volume
- 19
- Number
- 4
- Start Page
- 486
- End Page
- 490
- URI
- https://scholarworks.bwise.kr/erica/handle/2021.sw.erica/3371
- DOI
- 10.1016/j.cap.2019.01.022
- ISSN
- 1567-1739
- Abstract
- HfO2-based ferroelectrics have attracted attention as promising materials for advanced memory applications owing to their negative capacitance effect, high scalability, and full-CMOS compatibility. Accordingly, the switching dynamics of HfO2 thin films have been actively discussed and simulated using the Landau-Khalatnikov equation (LK model). Although the simulated results agree with experimental results in many studies, there is a slight dissimilarity near the coercive field in the polarization-electric field curve. For accurate and general modeling, a new model that combines the conventional LK model and Euler's equation was proposed in this work. The model was examined under single-domain and multi-domain conditions. The simulated curves using the Landau-Euler method better fit with measured curves than those using the LK model.
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