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Fabication of one-diode-one-resistor memory cell structure of Pt/CuO/Pt/TiN/Pt/CuO/InZnOx/Pt and the effect of TiN layer on the improved resistance switching characteristics
- Authors
- Kim, K. H.; Lee, S. R.; Ahn, S. -E.; Lee, M. -J.; Kang, B. S.
- Issue Date
- Jan-2012
- Publisher
- ELSEVIER SCIENCE SA
- Keywords
- Resistance switching; Nonvolatile memory; Oxygen vacancy; Diffusion
- Citation
- THIN SOLID FILMS, v.520, no.6, pp.2272 - 2277
- Indexed
- SCIE
SCOPUS
- Journal Title
- THIN SOLID FILMS
- Volume
- 520
- Number
- 6
- Start Page
- 2272
- End Page
- 2277
- ISSN
- 0040-6090
- Abstract
- We investigated the electrical properties of oxide-based one diode/one resistor (1D-1R) memory cells for resistance switching memory device application employing NiO as a storage element and p-CuO/n-InZnOx diode as a steering element. The electrical property of the 1D-1R memory cells was significantly affected by the repetitive resistance switching operation of the NiO layer. It appears that oxygen vacancy movement from NiO layer leads to the degradation of the oxide diode. We introduced a conducting TIN layer as a diffusion barrier between the diode and the NiO. As a result, the reliability of the 1D-1R memory cells was significantly improved. (C) 2011 Elsevier B.V. All rights reserved.
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Related Researcher
- Kang, Bo Soo
- COLLEGE OF SCIENCE AND CONVERGENCE TECHNOLOGY (DEPARTMENT OF APPLIED PHYSICS)