CMOS RF-IC 설계를 위한 실리콘 기판 커플링 모델 및 해석

Abstract

A circuit model of silicon substrate coupling for CMOS RF-IC design is developed. Its characteristics are analyzed by using a simple RC mesh model in order to investigate substrate coupling. The coupling effects due to the substrate were characterized with substrate resistivity, oxide thickness, substrate thickness, and physical distance. Thereby the silicon substrate effects are analytically investigated and verified with simulation. The analysis and simulation of the model have excellent agreements with MEDICI(2D device simulator) simulation results.