ScholarWorks@Hanyang University ERICA Campus: 2. Conference Papers

2. Conference Papers(COLLEGE OF SCIENCE AND CONVERGENCE TECHNOLOGY > DEPARTMENT OF PHOTONICS AND NANOELECTRONICS > 2. Conference Papers)812

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Collection's Items (Sorted by Issue Date in Descending order): 321 to 340 of 812

Quantum-Confined Stark Effect in InGaN/GaN Multiple Quantum Wells in Blue Light-Emitting Diodes Investigated by Photocurrent Spectroscopy

ConferenceIssue Date2015PlaceICC Jeju, Korea

Comprehensive Physical Model of InGaN-Based Visible Light-Emitting Diodes

ConferenceIssue Date2015PlaceICC Jeju, Korea

Method of Electroluminescence Metrology at the LED Epi-Wafer Stage

ConferenceIssue Date2015PlaceHamamatsu, Japan

Method of electroluminescence metrology at the LED epi-wafer stage

ConferenceIssue Date2015PlaceHamamatsu, Japan

Techniques for optoelectronic performance evaluation in InGaN-based light-emitting diodes (LEDs)

ConferenceIssue Date2015PlaceFukuoka, Japan

Performance analysis of light-emitting diodes by optoelectronic characterizations

ConferenceIssue Date2015PlaceNagoya Congress Center, Japan

Performance Analysis of Light-Emitting Diodes by Optoelectronic Characterizations

ConferenceIssue Date2015PlaceNagoya Congress Center, Nagoya, Japan

Quasi-CW Yb fiber laser with 3 kW peak power

ConferenceIssue Date2015PlaceBexco, Busan, Korea

Transverse Mode Control of a Nd:YAG Laser Using an Acousto-optic Modulator

ConferenceIssue Date2015PlaceBexco, Busan, Korea

Efficient sum-frequencygeneration of a Yb fiber laser and an Er, Yb fiber laser using an externalresonant cavity

ConferenceIssue Date2015PlaceBexco, Busan, Korea

Effect of the p-type GaN Thickness on the Near- Ultraviolet Light-emitting Diodes

ConferenceIssue Date2015PlaceBEXCO, Busan, Korea

Low-Frequency Noise Characteristics of InGaN-Based Light-Emitting Diodes

ConferenceIssue Date2015PlaceBEXCO, Busan, Korea

Study of the Ideality Factor of Blue Light-Emitting Diodes Using the Photovoltaic Characteristics

ConferenceIssue Date2015PlaceBEXCO, Busan, Korea

Carrier Overflow in InGaN/GaN Light-Emitting Diodes Investigated by Temperature-Dependent Short-Circuit Current Characteristics

ConferenceIssue Date2015PlaceBEXCO, Busan, Korea

Radiative and Non-radiative Carrier Lifetime in InGaN-Based Light-Emitting Diodes Investigated by Impedance Analysis

ConferenceIssue Date2015PlaceBEXCO, Busan, Korea

Efficiency Analysis of AlGaN Deep UV-LEDs based on Rate Equation

ConferenceIssue Date2015PlaceBEXCO, BUSAN, KOREA

Finite-Size Scaling Properties of the One-Dimensional Critical Quantum Ising Model in Matrix Product State Representations

차민철

ConferenceIssue Date2015Place전북대학교

InGaN 기반 발광다이오드의 순방향 전기용량-전압 특성에 대한 연구

ConferenceIssue Date2015PlaceKAIST, 대전

GaN 기반 산업의 next possible big application markets

ConferenceIssue Date2015PlaceKAIST, 대전

Frictional Characteristics of Mixed-Layer Graphene Fabricated by AFM

ConferenceIssue Date2015PlaceBarcelona, Spain

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