ScholarWorks@Hanyang University ERICA Campus: 2. Conference Papers

2. Conference Papers(COLLEGE OF SCIENCE AND CONVERGENCE TECHNOLOGY > DEPARTMENT OF PHOTONICS AND NANOELECTRONICS > 2. Conference Papers)812

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Collection's Items (Sorted by Issue Date in Descending order): 481 to 500 of 812

온도 의존 TRPL 을 이용한 Carrier 재결합 메커니즘 분석

ConferenceIssue Date2012Place고려대학교 하나스퀘어

Tm 광섬유 레이저로 펌핑한 고출력 Ho:YAG 레이저의 특성

ConferenceIssue Date2012Place제주도 금호리조트

InGaN 기반 LED 의 전기적, 광학적 분석 방법

ConferenceIssue Date2012Place고려대학교

양자우물 모양과 내부양자효율의 상관관계

ConferenceIssue Date2012Place고려대학교 하나스퀘어

InGaN 기반 LED 의 전기적, 광학적 분석 방법

ConferenceIssue Date2012Place고려대학교 하나스퀘어

InGaN 활성층의 유효 발광 체적 감소에 의한 LED의 효율저하 현상 해석

ConferenceIssue Date2012Place고려대학교 하나스퀘어

InGaN/GaN 다중양자우물 청색 발광다이오드의 온도변화에 따른 전기발광을 통한 내부양자효율 측정법의 한계

ConferenceIssue Date2012Place고려대학교 하나스퀘어

Temperature Distribution Analysis of Light-Emitting Diodes Based on Three-Dimensional Circuit Modeling

ConferenceIssue Date2012PlaceDaegu, Korea

Selective excitation of Laguerre-Gaussian (LG0n) doughnut modes in a diode-laser end-pumped solid-state laser

ConferenceIssue Date2012PlaceStockholm, Sweden

Electrical and optical characterization methods of light-emitting diodes

ConferenceIssue Date2012Place한양대학교 ERICA 캠퍼스

Analysis of Bias-Dependent Modulated Photocurrent Spectroscopy on InGaN/GaN Light-Emitting Diodes

ConferenceIssue Date2012PlaceBerlin, Germany

Analysis of Bias-Dependent Modulated Photocurrent Spectroscopy on InGaN/GaN Light-Emitting Diodes

ConferenceIssue Date2012PlaceBerlin, Germany

Selective generation of a Laguerre-Gaussian mode output in an end-pumped solid state laser

ConferenceIssue Date2012PlaceChiba university, Japan

High power Er:YAG lasers with LG01 and top-hat mode output beams

ConferenceIssue Date2012PlaceHuangshan, China

Residual Stress of GaN Epitaxial Layers Grown on Sapphire Substrates: Theoretical and Experimental Analyses

ConferenceIssue Date2012PlaceBusan

Novel Method of Measuring the Internal Quantum Efficiency of Light-Emitting Diodes at Room Temperature

ConferenceIssue Date2012PlaceBusan

Steady-State Photocapacitance Study of Deep-Level Defect States In GaN Epitaxial Layers Grown on Sapphire Substrates

ConferenceIssue Date2012PlaceBusan

Characteristics and application of high power fiber lasers at 2 um

ConferenceIssue Date2012Place강원도 강릉 KIST

Novel Method of Measuring the Internal Quantum Efficiency of Light-Emitting Diodes at Room Temperature

ConferenceIssue Date2012PlaceBusan, Korea

Residual Stress of GaN Epitaxial Layers Grown on Sapphire Substrates: Theoretical and Experimental Analyses

ConferenceIssue Date2012PlaceBUSAN, KOREA

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