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2. Conference Papers(COLLEGE OF SCIENCE AND CONVERGENCE TECHNOLOGY > DEPARTMENT OF PHOTONICS AND NANOELECTRONICS > 2. Conference Papers)812

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Collection's Items (Sorted by Issue Date in Descending order): 581 to 600 of 812

A measurement method of internal quantum efficiency in InGaN light-emitting diodes without any parameter assumptions

심종인

ConferenceIssue Date2010PlaceUSA
Explanation of the efficiency droop in InGaN multiple quantum well light-emitting diodes by the reduced radiative recombination probability

심종인

ConferenceIssue Date2010PlaceUSA
Theoretical and Experimental Studies on the Internal Quantum Efficiency in Blue/Green Light Emitting Diodes

심종인

ConferenceIssue Date2009PlaceTaipei International Convention Center
Optical, Electrical, and Structural properties of ultrathin Zirconium oxide films

안일신

ConferenceIssue Date2009CitationThe 6th International conference on asvanced materials and devicesPublisher한국물리학회PlaceJeju, Korea
Simulation study of sub-10 nm pattern formation using diblok polymer directed self-assemply

안일신

ConferenceIssue Date2009CitationThe 6th International conference on asvanced materials and devicesPublisher한국물리학회PlaceJeju, Korea
CIGS films investigated by near infrared spectroscopic ellipsometry

안일신

ConferenceIssue Date2009Citation19th international photovoltaic science and engineering conferencePublisherPVSEC committeePlace제주도
Annealing of ZrO2 thin films studied by vacuum UV spectroscopic ellipsometry

안일신

ConferenceIssue Date2009CitationAVS 56th International SymposiumPublisherAmerican Vacuum SocietyPlaceSan Jose, 미국
Temperature- and Excitation-Dependent Internal Quantum Efficiencies in InGaN Blue/Green Light Emitting Diodes

심종인

ConferenceIssue Date2009PlaceInternational Convention Center Jeju, Korea
Relationship between Thermal Distribution and Current Crowding in Lateral GAN-Based Light-Emitting Diodes

심종인

ConferenceIssue Date2009PlaceInternational Convention Center Jeju, Korea
Temperature- and excitation-dependent internal quantum efficiencies in InGaN blue/green light emitting diodes

신동수

ConferenceIssue Date2009PlaceICC Jeju, Jeju, Korea
Relationship between thermal distribution and current crowding in lateral GaN-based light-emitting diodes

신동수

ConferenceIssue Date2009PlaceICC Jeju, Jeju, Korea
Rate Equation Analysis of Efficiency Droop in InGaN Light-Emitting

심종인

ConferenceIssue Date2009PlaceInternational Convention Center Jeju, Korea
A Measurement Method of Internal Quantum Efficiency in InGaNBased Quantum Well Structure by Intensity Dependent Photoluminescence

심종인

ConferenceIssue Date2009PlaceInternational Convention Center Jeju, Korea
Antimony Surfactant Effect on Green Emission InGaN/GaN Multi Quantum Wells Grown by MOCVD

심종인

ConferenceIssue Date2009PlaceInternational Convention Center Jeju, Korea
A measurement method of internal quantum efficiency in InGaN-based quantum well structure by intensity dependent photoluminescence

신동수

ConferenceIssue Date2009PlaceICC Jeju, Jeju, Korea
Carrier Transport and Distribution in Dual-Wavelength InGaN Light-Emitting Diodes

심종인

ConferenceIssue Date2009PlaceInternational Convention Center Jeju, Korea
Understanding of Internal Quantum Efficiency in InGaN-based Quantum Well Light Emitting Diodes

심종인

ConferenceIssue Date2009
Analysis of LED structure using Glow Discharge Spectrometer

심종인

ConferenceIssue Date2009Place광주 김대중컨벤션 센터
Bow Measurement and Stress Analysis of GaN LED Epi-Wafers Grown on Sapphire Substrates

심종인

ConferenceIssue Date2009Place광주 김대중컨벤션 센터
Analysis of reverse biased electrical property in InGaN Light Emitting Diode by the three-dimensional circuit modeling

심종인

ConferenceIssue Date2009Place광주 김대중컨벤션 센터
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