Significant improvement of reverse leakage current characteristics of Si-based homoepitaxial InGaN/GaN blue light emitting diodesopen access
- Authors
- Lee, Moonsang; Lee, Hyun Uk; Song, Keun Man; Kim, Jaekyun
- Issue Date
- Jan-2019
- Publisher
- Nature Publishing Group
- Citation
- Scientific Reports, v.9, no.1, pp 1 - 6
- Pages
- 6
- Indexed
- SCI
SCIE
SCOPUS
- Journal Title
- Scientific Reports
- Volume
- 9
- Number
- 1
- Start Page
- 1
- End Page
- 6
- URI
- https://scholarworks.bwise.kr/erica/handle/2021.sw.erica/3553
- DOI
- 10.1038/s41598-019-38664-x
- ISSN
- 2045-2322
- Abstract
- The nature of reverse leakage current characteristics in InGaN/GaN blue light emitting diodes (LEDs) on freestanding GaN crystals detached from a Si substrate is investigated for the first time, using temperature-dependent current-voltage (T-I-V) measurement. It is found that the Si-based homoepitaxial InGaN/GaN LEDs exhibit a significant suppression of the reverse leakage current without any additional processes. Their conduction mechanism can be divided into variable-range hopping and nearest neighbor hopping (NNH) around 360 K, which is enhanced by Poole-Frenkel emission. The analysis of T-I-V curves of the homoepitaxial LEDs yields an activation energy of carriers of 35 meV at -10 V, about 50% higher than that of the conventional ones (E-a = 21 meV at -10 V). This suggests that our homoepitaxial InGaN/GaN LEDs bears the high activation energy as well as low threading dislocation density (about 1 x 10(6)/cm(2)), effectively suppressing the reverse leakage current. We expect that this study will shed a light on the high reliability and carrier tunneling characteristics of the homoepitaxial InGaN/GaN blue LEDs produced from a Si substrate and also envision a promising future for their successful adoption by LED community via cost-effective homoepitaxial fabrication of LEDs.
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