In-situ X-ray photoelectron spectroscopy of trimethyl aluminum and water half-cycle treatments on HF-treated and O 3-oxidized GaN substrates
- Authors
- Sivasubramani, Prasanna; Park, Tae joo; Coss, Brian E.; Lucero, Antonio; Huang, Jie; Brennan, Barry; Cao, Yu; Jena, Debdeep; Xing, Huili Grace; Wallace, Robert.M.; Kim, Jiyoung
- Issue Date
- Jan-2012
- Publisher
- Wiley - VCH Verlag GmbH & CO. KGaA
- Keywords
- Atomic layer deposition; GaN; Half-cycle treatments; In-situ XPS; Self-cleaning effects; Trimethyl aluminum
- Citation
- Physica Status Solidi - Rapid Research Letetrs, v.6, no.1, pp 22 - 24
- Pages
- 3
- Indexed
- SCI
SCIE
SCOPUS
- Journal Title
- Physica Status Solidi - Rapid Research Letetrs
- Volume
- 6
- Number
- 1
- Start Page
- 22
- End Page
- 24
- URI
- https://scholarworks.bwise.kr/erica/handle/2021.sw.erica/36190
- DOI
- 10.1002/pssr.201105417
- ISSN
- 1862-6254
1862-6270
- Abstract
- We have investigated the effect of trimethyl aluminum (TMA) and water (H 2O) half-cycle treatments on HF-treated, and O 3-oxidized GaN surfaces at 300 °C. The in-situ X-ray photoelectron spectroscopy results indicate no significant re-growth of Ga-O-N or self-cleaning on HF-treated and O 3-oxidized GaN substrates with exposure to water and TMA. This result is different from the self-cleaning effect of Ga 2O 3 seen on sulfur-treated GaAs or InGaAs substrates. O 3 causes aggressive oxidation of GaN substrate and direct O-N bonding compared to H 2O.
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