Atomic Layer Deposition Process of Hf-Based High-k Gate Dielectric Film on Si Substrate
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Park, Tae joo | - |
dc.contributor.author | Cho, Moonju | - |
dc.contributor.author | Jung, Hyung suk | - |
dc.contributor.author | Hwang, Cheol seong | - |
dc.date.accessioned | 2021-06-23T09:44:37Z | - |
dc.date.available | 2021-06-23T09:44:37Z | - |
dc.date.created | 2021-01-22 | - |
dc.date.issued | 2012-08 | - |
dc.identifier.issn | 0000-0000 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/erica/handle/2021.sw.erica/36223 | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | WILEY-VCH Verlag GmbH & Co. | - |
dc.title | Atomic Layer Deposition Process of Hf-Based High-k Gate Dielectric Film on Si Substrate | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Park, Tae joo | - |
dc.identifier.doi | 10.1002/9783527646340.ch4 | - |
dc.identifier.scopusid | 2-s2.0-84885994738 | - |
dc.identifier.bibliographicCitation | High-k Gate Dielectrics for CMOS Technology, pp.77 - 110 | - |
dc.relation.isPartOf | High-k Gate Dielectrics for CMOS Technology | - |
dc.citation.title | High-k Gate Dielectrics for CMOS Technology | - |
dc.citation.startPage | 77 | - |
dc.citation.endPage | 110 | - |
dc.type.rims | ART | - |
dc.type.docType | Book Chapter | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scopus | - |
dc.subject.keywordAuthor | Atomic layer deposition | - |
dc.subject.keywordAuthor | Doping | - |
dc.subject.keywordAuthor | High-k gate dielectrics | - |
dc.subject.keywordAuthor | Oxygen sources | - |
dc.subject.keywordAuthor | Precursors | - |
dc.subject.keywordAuthor | Thermal budget | - |
dc.identifier.url | https://onlinelibrary.wiley.com/doi/10.1002/9783527646340.ch4 | - |
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