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Atomic Layer Deposition Process of Hf-Based High-k Gate Dielectric Film on Si Substrate

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dc.contributor.authorPark, Tae joo-
dc.contributor.authorCho, Moonju-
dc.contributor.authorJung, Hyung suk-
dc.contributor.authorHwang, Cheol seong-
dc.date.accessioned2021-06-23T09:44:37Z-
dc.date.available2021-06-23T09:44:37Z-
dc.date.created2021-01-22-
dc.date.issued2012-08-
dc.identifier.issn0000-0000-
dc.identifier.urihttps://scholarworks.bwise.kr/erica/handle/2021.sw.erica/36223-
dc.language영어-
dc.language.isoen-
dc.publisherWILEY-VCH Verlag GmbH & Co.-
dc.titleAtomic Layer Deposition Process of Hf-Based High-k Gate Dielectric Film on Si Substrate-
dc.typeArticle-
dc.contributor.affiliatedAuthorPark, Tae joo-
dc.identifier.doi10.1002/9783527646340.ch4-
dc.identifier.scopusid2-s2.0-84885994738-
dc.identifier.bibliographicCitationHigh-k Gate Dielectrics for CMOS Technology, pp.77 - 110-
dc.relation.isPartOfHigh-k Gate Dielectrics for CMOS Technology-
dc.citation.titleHigh-k Gate Dielectrics for CMOS Technology-
dc.citation.startPage77-
dc.citation.endPage110-
dc.type.rimsART-
dc.type.docTypeBook Chapter-
dc.description.journalClass1-
dc.description.isOpenAccessN-
dc.description.journalRegisteredClassscopus-
dc.subject.keywordAuthorAtomic layer deposition-
dc.subject.keywordAuthorDoping-
dc.subject.keywordAuthorHigh-k gate dielectrics-
dc.subject.keywordAuthorOxygen sources-
dc.subject.keywordAuthorPrecursors-
dc.subject.keywordAuthorThermal budget-
dc.identifier.urlhttps://onlinelibrary.wiley.com/doi/10.1002/9783527646340.ch4-
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ERICA 공학대학 (DEPARTMENT OF MATERIALS SCIENCE AND CHEMICAL ENGINEERING)
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