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Atomic Layer Deposition Process of Hf-Based High-k Gate Dielectric Film on Si Substrate
- Issue Date
- Aug-2012
- Publisher
- WILEY-VCH Verlag GmbH & Co.
- Keywords
- Atomic layer deposition; Doping; High-k gate dielectrics; Oxygen sources; Precursors; Thermal budget
- Citation
- High-k Gate Dielectrics for CMOS Technology, pp.77 - 110
- Indexed
- SCOPUS
- Journal Title
- High-k Gate Dielectrics for CMOS Technology
- Start Page
- 77
- End Page
- 110
- ISSN
- 0000-0000
- Files in This Item
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Related Researcher
- Park, Tae Joo
- ERICA 공학대학 (DEPARTMENT OF MATERIALS SCIENCE AND CHEMICAL ENGINEERING)