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Effects of Oxygen Source on Film Properties of Atomic-Layer-Deposited La-Silicate Film Using La[N(SiMe3)(2)](3)
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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Choi, Yu Jin | - |
| dc.contributor.author | Won, Seok-Jun | - |
| dc.contributor.author | Jung, Hyung-Suk | - |
| dc.contributor.author | Park, Sanghyun | - |
| dc.contributor.author | Cho, Deok-Yong | - |
| dc.contributor.author | Hwang, Cheol Seong | - |
| dc.contributor.author | Park, Tae Joo | - |
| dc.contributor.author | Kim, Hyeong Joon | - |
| dc.date.accessioned | 2021-06-23T10:02:10Z | - |
| dc.date.available | 2021-06-23T10:02:10Z | - |
| dc.date.created | 2021-01-21 | - |
| dc.date.issued | 2012-07 | - |
| dc.identifier.issn | 2162-8742 | - |
| dc.identifier.uri | https://scholarworks.bwise.kr/erica/handle/2021.sw.erica/36273 | - |
| dc.description.abstract | The effect of oxygen sources, i.e. O-3 or H2O, on chemical composition, dielectric constant and leakage current density of atomic-layer-deposited La-silicate films was examined. The dielectric constant of La-silicate films grown using O-3 was similar to 8.0, which was lower than that of La-silicate films grown using H2O, similar to 11.7 due to the higher Si concentrations. However, leakage current density of La-silicate films grown using O-3 was about 3 orders of magnitude lower than that of La-silicate films grown using H2O at an identical capacitance-equivalent-thickness (but almost half the physical thickness), due to the higher Si concentrations and less La-carbonate formation. (C) 2012 The Electrochemical Society. All rights reserved. | - |
| dc.language | 영어 | - |
| dc.language.iso | en | - |
| dc.publisher | The Electrochemical Society | - |
| dc.title | Effects of Oxygen Source on Film Properties of Atomic-Layer-Deposited La-Silicate Film Using La[N(SiMe3)(2)](3) | - |
| dc.type | Article | - |
| dc.contributor.affiliatedAuthor | Park, Tae Joo | - |
| dc.identifier.doi | 10.1149/2.014201ssl | - |
| dc.identifier.scopusid | 2-s2.0-84880433202 | - |
| dc.identifier.wosid | 000318339200003 | - |
| dc.identifier.bibliographicCitation | ECS Solid State Letters, v.1, no.1, pp.N4 - N6 | - |
| dc.relation.isPartOf | ECS Solid State Letters | - |
| dc.citation.title | ECS Solid State Letters | - |
| dc.citation.volume | 1 | - |
| dc.citation.number | 1 | - |
| dc.citation.startPage | N4 | - |
| dc.citation.endPage | N6 | - |
| dc.type.rims | ART | - |
| dc.type.docType | Article | - |
| dc.description.journalClass | 1 | - |
| dc.description.isOpenAccess | N | - |
| dc.description.journalRegisteredClass | scie | - |
| dc.description.journalRegisteredClass | scopus | - |
| dc.relation.journalResearchArea | Materials Science | - |
| dc.relation.journalResearchArea | Physics | - |
| dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
| dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
| dc.subject.keywordPlus | VAPOR-DEPOSITION | - |
| dc.subject.keywordPlus | GATE DIELECTRICS | - |
| dc.subject.keywordPlus | PRECURSOR | - |
| dc.subject.keywordPlus | OXIDES | - |
| dc.subject.keywordPlus | SI | - |
| dc.subject.keywordPlus | HF | - |
| dc.subject.keywordAuthor | THIN-FILMS | - |
| dc.subject.keywordAuthor | PRECURSOR | - |
| dc.subject.keywordAuthor | VAPOR-DEPOSITION | - |
| dc.subject.keywordAuthor | SI | - |
| dc.subject.keywordAuthor | KAPPA GATE DIELECTRICS | - |
| dc.subject.keywordAuthor | OXIDES | - |
| dc.subject.keywordAuthor | HF | - |
| dc.identifier.url | https://iopscience.iop.org/article/10.1149/2.014201ssl | - |
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Related Researcher
- Park, Tae Joo
- ERICA 공학대학 (DEPARTMENT OF MATERIALS SCIENCE AND CHEMICAL ENGINEERING)