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Effects of Oxygen Source on Film Properties of Atomic-Layer-Deposited La-Silicate Film Using La[N(SiMe3)(2)](3)
- Authors
- Choi, Yu Jin; Won, Seok-Jun; Jung, Hyung-Suk; Park, Sanghyun; Cho, Deok-Yong; Hwang, Cheol Seong; Park, Tae Joo; Kim, Hyeong Joon
- Issue Date
- Jul-2012
- Publisher
- The Electrochemical Society
- Keywords
- THIN-FILMS; PRECURSOR; VAPOR-DEPOSITION; SI; KAPPA GATE DIELECTRICS; OXIDES; HF
- Citation
- ECS Solid State Letters, v.1, no.1, pp.N4 - N6
- Indexed
- SCIE
SCOPUS
- Journal Title
- ECS Solid State Letters
- Volume
- 1
- Number
- 1
- Start Page
- N4
- End Page
- N6
- ISSN
- 2162-8742
- Abstract
- The effect of oxygen sources, i.e. O-3 or H2O, on chemical composition, dielectric constant and leakage current density of atomic-layer-deposited La-silicate films was examined. The dielectric constant of La-silicate films grown using O-3 was similar to 8.0, which was lower than that of La-silicate films grown using H2O, similar to 11.7 due to the higher Si concentrations. However, leakage current density of La-silicate films grown using O-3 was about 3 orders of magnitude lower than that of La-silicate films grown using H2O at an identical capacitance-equivalent-thickness (but almost half the physical thickness), due to the higher Si concentrations and less La-carbonate formation. (C) 2012 The Electrochemical Society. All rights reserved.
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Related Researcher
- Park, Tae Joo
- ERICA 공학대학 (DEPARTMENT OF MATERIALS SCIENCE AND CHEMICAL ENGINEERING)