웨이퍼 레벨 배선 측정에 근거한 신호 전송 특성
DC Field | Value | Language |
---|---|---|
dc.contributor.author | 김혜원 | - |
dc.contributor.author | 이민 | - |
dc.contributor.author | 어영선 | - |
dc.date.accessioned | 2021-06-23T10:41:30Z | - |
dc.date.available | 2021-06-23T10:41:30Z | - |
dc.date.created | 2021-02-18 | - |
dc.date.issued | 2011-06 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/erica/handle/2021.sw.erica/37381 | - |
dc.description.abstract | Interconnect lines are characterized in the wafer-level for high-speed circuit performance evaluation. Test lines are designed and fabricated by using an 130 nm CMOS technology. In the low-frequency experiments line capacitances and resistances are determined by using a LCR meter. Parasitic pads are de-embedded. For the test structure, transmission line circuit parameters using field solver are also determined. Then the signal transients of the test lines are determined from experiment and simulation results. | - |
dc.language | 한국어 | - |
dc.language.iso | ko | - |
dc.publisher | 대한전자공학회 | - |
dc.title | 웨이퍼 레벨 배선 측정에 근거한 신호 전송 특성 | - |
dc.title.alternative | Signal Transients based on Wafer Level Measurement of Interconnect Lines | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | 어영선 | - |
dc.identifier.bibliographicCitation | 2011년 대한전자공학회 하계종합할술대회 논문집, v.34, no.1, pp.332 - 334 | - |
dc.relation.isPartOf | 2011년 대한전자공학회 하계종합할술대회 논문집 | - |
dc.citation.title | 2011년 대한전자공학회 하계종합할술대회 논문집 | - |
dc.citation.volume | 34 | - |
dc.citation.number | 1 | - |
dc.citation.startPage | 332 | - |
dc.citation.endPage | 334 | - |
dc.type.rims | ART | - |
dc.description.journalClass | 3 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | other | - |
dc.identifier.url | https://www.dbpia.co.kr/journal/articleDetail?nodeId=NODE02336633 | - |
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