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웨이퍼 레벨 배선 측정에 근거한 신호 전송 특성Signal Transients based on Wafer Level Measurement of Interconnect Lines
- Other Titles
- Signal Transients based on Wafer Level Measurement of Interconnect Lines
- Issue Date
- Jun-2011
- Publisher
- 대한전자공학회
- Citation
- 2011년 대한전자공학회 하계종합할술대회 논문집, v.34, no.1, pp.332 - 334
- Indexed
- OTHER
- Journal Title
- 2011년 대한전자공학회 하계종합할술대회 논문집
- Volume
- 34
- Number
- 1
- Start Page
- 332
- End Page
- 334
- Abstract
- Interconnect lines are characterized in the wafer-level for high-speed circuit performance evaluation. Test lines are designed and fabricated by using an 130 nm CMOS technology. In the low-frequency experiments line capacitances and resistances are determined by using a LCR meter. Parasitic pads are de-embedded. For the test structure, transmission line circuit parameters using field solver are also determined. Then the signal transients of the test lines are determined from experiment and simulation results.
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Related Researcher
- EO, YUNG SEON
- ERICA 공학대학 (SCHOOL OF ELECTRICAL ENGINEERING)