Resistive Switching and Transport Characteristics of Cu/a-Si/Si Devices
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Kang, Bo Soo | - |
dc.contributor.author | Cha, Dongjae | - |
dc.contributor.author | Lee, Sungjoo | - |
dc.contributor.author | Na, Sang-Chul | - |
dc.contributor.author | Kim, Dong-Wook | - |
dc.date.accessioned | 2021-06-23T11:02:47Z | - |
dc.date.available | 2021-06-23T11:02:47Z | - |
dc.date.created | 2021-01-21 | - |
dc.date.issued | 2011-05 | - |
dc.identifier.issn | 0374-4884 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/erica/handle/2021.sw.erica/38117 | - |
dc.description.abstract | We prepared Cu/amorphous silicon (a-Si)/Si structures with active device diameters of 5, 10, and 20 mu m. The Cu/a-Si/Si devices showed bipolar resistive switching (RS) behaviors and the ON/OFF ratio was larger than 10(6). In the low-resistance state (LRS), the current-voltage (I-V) curves of the 10- and 20-mu m-sized devices were linear. In contrast, the LRS I-V curves for the 5-mu m-sized devices were symmetric and nonlinear, which could be explained by tunnelling conduction. The Cu/a-Si/Si devices consist of materials compatible with conventional CMOS processes and can be candidates for nonvolatile memory devices. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | KOREAN PHYSICAL SOC | - |
dc.title | Resistive Switching and Transport Characteristics of Cu/a-Si/Si Devices | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Kang, Bo Soo | - |
dc.identifier.doi | 10.3938/jkps.58.1156 | - |
dc.identifier.scopusid | 2-s2.0-79957748347 | - |
dc.identifier.wosid | 000290635700018 | - |
dc.identifier.bibliographicCitation | JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.58, no.5, pp.1156 - 1159 | - |
dc.relation.isPartOf | JOURNAL OF THE KOREAN PHYSICAL SOCIETY | - |
dc.citation.title | JOURNAL OF THE KOREAN PHYSICAL SOCIETY | - |
dc.citation.volume | 58 | - |
dc.citation.number | 5 | - |
dc.citation.startPage | 1156 | - |
dc.citation.endPage | 1159 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.identifier.kciid | ART001552545 | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.description.journalRegisteredClass | kci | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Physics, Multidisciplinary | - |
dc.subject.keywordPlus | TRANSITION | - |
dc.subject.keywordAuthor | Resistive switching | - |
dc.subject.keywordAuthor | a-Si | - |
dc.subject.keywordAuthor | Metal-semiconductor-semiconductor structure | - |
dc.identifier.url | https://www.jkps.or.kr/journal/view.html?volume=58&number=5&spage=1156&year=2011 | - |
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