Resistive Switching and Transport Characteristics of Cu/a-Si/Si Devices
- Authors
- Kang, Bo Soo; Cha, Dongjae; Lee, Sungjoo; Na, Sang-Chul; Kim, Dong-Wook
- Issue Date
- May-2011
- Publisher
- KOREAN PHYSICAL SOC
- Keywords
- Resistive switching; a-Si; Metal-semiconductor-semiconductor structure
- Citation
- JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.58, no.5, pp.1156 - 1159
- Indexed
- SCIE
SCOPUS
KCI
- Journal Title
- JOURNAL OF THE KOREAN PHYSICAL SOCIETY
- Volume
- 58
- Number
- 5
- Start Page
- 1156
- End Page
- 1159
- URI
- https://scholarworks.bwise.kr/erica/handle/2021.sw.erica/38117
- DOI
- 10.3938/jkps.58.1156
- ISSN
- 0374-4884
- Abstract
- We prepared Cu/amorphous silicon (a-Si)/Si structures with active device diameters of 5, 10, and 20 mu m. The Cu/a-Si/Si devices showed bipolar resistive switching (RS) behaviors and the ON/OFF ratio was larger than 10(6). In the low-resistance state (LRS), the current-voltage (I-V) curves of the 10- and 20-mu m-sized devices were linear. In contrast, the LRS I-V curves for the 5-mu m-sized devices were symmetric and nonlinear, which could be explained by tunnelling conduction. The Cu/a-Si/Si devices consist of materials compatible with conventional CMOS processes and can be candidates for nonvolatile memory devices.
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