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Hall effect-induced acceleration of electromigration failures in spin valve multilayers under magnetic field

Authors
Jiang, JingZeng, Ding GuiChung, Kyung-WonKim, JongryoulBae, Seongtae
Issue Date
Apr-2011
Publisher
AMER INST PHYSICS
Keywords
ELECTRICAL RELIABILITY; THIN-FILMS; METALS; READ HEADS
Citation
APPLIED PHYSICS LETTERS, v.98, no.16, pp.1 - 3
Indexed
SCIE
SCOPUS
Journal Title
APPLIED PHYSICS LETTERS
Volume
98
Number
16
Start Page
1
End Page
3
URI
https://scholarworks.bwise.kr/erica/handle/2021.sw.erica/38132
DOI
10.1063/1.3581042
ISSN
0003-6951
Abstract
It was observed that electromigration (EM)-induced failures in spin valve multilayers were severely accelerated by an externally applied magnetic field. The theoretical and experimental analysis results confirmed that Hall effect-induced Lorentz force applied to the perpendicular-to-the-film-plane direction is primarily responsible for the severe acceleration of the EM failures due to its dominant contribution to abruptly increasing local temperature and current density. The proposed failure model and the theoretical calculations were demonstrated to agree well with the experimental observations. (C) 2011 American Institute of Physics. [doi: 10.1063/1.3581042]
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Kim, Jong ryoul
ERICA 공학대학 (DEPARTMENT OF MATERIALS SCIENCE AND CHEMICAL ENGINEERING)
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