Observation of magnetic domain structures in epitaxial MnAs film on GaAs(001) with temperature hysteresis
- Authors
- Kim, JinBae; Akinaga, Hiro; Kim, Jongryoul
- Issue Date
- Mar-2011
- Publisher
- AMER INST PHYSICS
- Keywords
- GAAS
- Citation
- APPLIED PHYSICS LETTERS, v.98, no.10, pp.1 - 3
- Indexed
- SCIE
SCOPUS
- Journal Title
- APPLIED PHYSICS LETTERS
- Volume
- 98
- Number
- 10
- Start Page
- 1
- End Page
- 3
- URI
- https://scholarworks.bwise.kr/erica/handle/2021.sw.erica/38206
- DOI
- 10.1063/1.3564900
- ISSN
- 0003-6951
- Abstract
- The saturation magnetization of MnAs films epitaxially grown on GaAs(001) substrates exhibited temperature hysteresis in the temperature range of 10-45 degrees C. We investigated the cause of the temperature hysteresis using temperature- and field-controlled magnetic force microscopy (MFM). The MFM results showed that inside the ferromagnetic alpha-MnAs stripes of the film at 30 degrees C, 180 degrees domains were formed during cooling but a single domain state was developed during heating. Despite the cooling procedure, a single domain state was found inside the alpha-MnAs stripes when a magnetic field of 800 Oe was applied. From these results, the spontaneous magnetization of the alpha-MnAs phase was ascribed to the temperature hysteresis. (C) 2011 American Institute of Physics. [doi:10.1063/1.3564900]
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