Electrodeposited Single Crystalline PbTe Nanowires and Their Transport Properties
- Authors
- Jung, Hyunsung; Park, Deok-Yong; Xiao, Feng; Lee, Kyu Hwan; Choa, Yong-Ho; Yoo, Bongyoung; Myung, Nosang V.
- Issue Date
- Feb-2011
- Publisher
- American Chemical Society
- Keywords
- THIN-FILMS; CARRIER CONCENTRATION; LEAD-TELLURIDE; GALVANIC DISPLACEMENT; THERMOELECTRIC PROPERTIES; ELECTRICAL-CONDUCTIVITY; ANODIC ALUMINA TEMPLATES; NANOSTRUCTURES; ARRAYS; HIGH-ASPECT-RATIO
- Citation
- Journal of Physical Chemistry C, v.115, no.7, pp.2993 - 2998
- Indexed
- SCIE
SCOPUS
- Journal Title
- Journal of Physical Chemistry C
- Volume
- 115
- Number
- 7
- Start Page
- 2993
- End Page
- 2998
- URI
- https://scholarworks.bwise.kr/erica/handle/2021.sw.erica/38236
- DOI
- 10.1021/jp110739v
- ISSN
- 1932-7447
- Abstract
- Single crystalline PbTe nanowires were potentiostatically electrodeposited by a template-directed method using track-etched polycarbonate membranes as scaffolds in acidic nitrate baths. They exhibited a face-centered cubic (FCC) structure with a preferred growth direction about 31 degrees against the [200] direction. By galvanic displacing the ends of PbTe nanowire with gold prior to electrode microfabrication, the Schottky barrier (i.e., native PbTe oxide) at the interfaces between nanowire and electrodes was eliminated/reduced to form an ohmic contact between nanowire and electrodes. Field effect transistor (FET) transfer characteristics indicated that the electrodeposited single-crystalline PbTe nanowires are p-type semiconductors with the estimated field effect carrier mobility and concentration of 3.32 +/- 0.15 cm(2)/(V s) and 1.85 +/- 1.06 x 10(18) cm(-3), respectively.
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