Time-dependent current-voltage curves during the forming process in unipolar resistance switching
- Authors
- Lee, S. B.; Yoo, H. K.; Chang, S. H.; Gao, L. G.; Kang, B. S.; Lee, M. -J.; Kim, C. J.; Noh, T. W.
- Issue Date
- Jan-2011
- Publisher
- AMER INST PHYSICS
- Keywords
- FILMS; MEMORY; NANOFILAMENTS
- Citation
- APPLIED PHYSICS LETTERS, v.98, no.5, pp.1 - 4
- Indexed
- SCIE
SCOPUS
- Journal Title
- APPLIED PHYSICS LETTERS
- Volume
- 98
- Number
- 5
- Start Page
- 1
- End Page
- 4
- URI
- https://scholarworks.bwise.kr/erica/handle/2021.sw.erica/38281
- DOI
- 10.1063/1.3552676
- ISSN
- 0003-6951
- Abstract
- We investigated the time-dependent current-voltage curves of the forming process in unipolar resistance switching. We applied triggered-voltage triangular-waveform (pulse-waveform) signals with varied sweep rate (amplitude) to Pt/SrTiOx/Pt capacitors. By investigating their temperature dependences, we found that the forming process was driven by two different mechanisms, depending on the sweep rate (amplitude) : a purely electrical dielectric breakdown and a thermally assisted dielectric breakdown. For the latter process, we observed precursory changes in the current I(t) before the forming process. By fitting the time-dependent precursory changes with I(t) = I-o -A exp (-t/tau), we suggest that the thermally activated migration of oxygen vacancies/ions could help the thermally assisted dielectric breakdown. (C) 2011 American Institute of Physics. [doi: 10.1063/1.3552676]
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