Highly efficient InGaN/GaN blue LEDs on large diameter Si (111) substrates comparable to those on sapphire
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Kim, Jun-Youn | - |
dc.contributor.author | Tak, Yongjo | - |
dc.contributor.author | Hong, Hyun-Gi | - |
dc.contributor.author | Chae, Suhee | - |
dc.contributor.author | Lee, Jae Won | - |
dc.contributor.author | Choi, Hyoji | - |
dc.contributor.author | Kim, Jae Kyun | - |
dc.contributor.author | Min, Bokki | - |
dc.contributor.author | Park, Youngsoo | - |
dc.contributor.author | Chung, U-In. | - |
dc.contributor.author | Kim, Minho | - |
dc.contributor.author | Lee, Seongsuk | - |
dc.contributor.author | Cha, Namgoo | - |
dc.contributor.author | Shin, Yoonhee | - |
dc.contributor.author | Sone, Cheolsoo | - |
dc.contributor.author | Kim, Jong-Ryeol | - |
dc.contributor.author | Shim, Jong-In | - |
dc.date.accessioned | 2021-06-23T12:04:43Z | - |
dc.date.available | 2021-06-23T12:04:43Z | - |
dc.date.issued | 2011-09 | - |
dc.identifier.issn | 0277-786X | - |
dc.identifier.uri | https://scholarworks.bwise.kr/erica/handle/2021.sw.erica/39133 | - |
dc.description.abstract | Highly efficient InGaN/GaN LEDs grown on 4- and 8-inch silicon substrates comparable to those on sapphire substrates have been successfully demonstrated. High crystalline quality of n-GaN templates on Si were obtained by optimizing combination of stress compensation layers and dislocation reduction layers. The full-width at half-maximum (FWHM) values of GaN (0002) and (10-12) ω-rocking curves of n-GaN templates on 4-inch Si substrates were 205 and 290 arcsec and those on 8-inch Si substrate were 220 and 320 arcsec, respectively. The dislocation densities were measured about 2~3×10 8/cm2 by atomic force microscopy (AFM) after in-situ SiH4 and NH3 treatment. Under the unencapsulated measurement condition of vertical InGaN/GaN LED grown on 4-inch Si substrate, the overall output power of the 1.4×1.4 mm2 chips representing a median performance exceeded 504 mW with the forward voltage of 3.2 V at the driving current of 350 mA. These are the best values among the reported values of blue LEDs grown on Si substrates. The measured internal quantum efficiency was 90 % at injection current of 350 mA. The efficiency droops of vertical LED chips on Si between the maximum efficiency and the efficiency measured at 1A (56.69 A/cm2) input current was 5%. © 2011 Copyright Society of Photo-Optical Instrumentation Engineers (SPIE). | - |
dc.format.extent | 6 | - |
dc.language | 영어 | - |
dc.language.iso | ENG | - |
dc.publisher | SPIE | - |
dc.title | Highly efficient InGaN/GaN blue LEDs on large diameter Si (111) substrates comparable to those on sapphire | - |
dc.type | Article | - |
dc.publisher.location | 미국 | - |
dc.identifier.doi | 10.1117/12.892441 | - |
dc.identifier.scopusid | 2-s2.0-80053957196 | - |
dc.identifier.wosid | 000296133000009 | - |
dc.identifier.bibliographicCitation | Proceedings of SPIE - The International Society for Optical Engineering, v.8123, pp 1 - 6 | - |
dc.citation.title | Proceedings of SPIE - The International Society for Optical Engineering | - |
dc.citation.volume | 8123 | - |
dc.citation.startPage | 1 | - |
dc.citation.endPage | 6 | - |
dc.type.docType | Conference Paper | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Optics | - |
dc.relation.journalWebOfScienceCategory | Optics | - |
dc.subject.keywordPlus | Best value | - |
dc.subject.keywordPlus | Blue LEDs | - |
dc.subject.keywordPlus | Dislocation densities | - |
dc.subject.keywordPlus | Dislocation reduction | - |
dc.subject.keywordPlus | Driving current | - |
dc.subject.keywordPlus | Droop | - |
dc.subject.keywordPlus | Forward voltage | - |
dc.subject.keywordPlus | GaN on Si | - |
dc.subject.keywordPlus | High-crystalline quality | - |
dc.subject.keywordPlus | In-situ | - |
dc.subject.keywordPlus | InGaN/GaN | - |
dc.subject.keywordPlus | Injection currents | - |
dc.subject.keywordPlus | Input current | - |
dc.subject.keywordPlus | Internal quantum efficiency | - |
dc.subject.keywordPlus | Large diameter | - |
dc.subject.keywordPlus | LED chips | - |
dc.subject.keywordPlus | Light emitting diode (LED) | - |
dc.subject.keywordPlus | Maximum Efficiency | - |
dc.subject.keywordPlus | Measurement conditions | - |
dc.subject.keywordPlus | Output power | - |
dc.subject.keywordPlus | Rocking curves | - |
dc.subject.keywordPlus | Sapphire substrates | - |
dc.subject.keywordPlus | Si substrates | - |
dc.subject.keywordPlus | Si(111) substrate | - |
dc.subject.keywordPlus | Silicon substrates | - |
dc.subject.keywordPlus | Stress compensation | - |
dc.subject.keywordPlus | vertical LED | - |
dc.subject.keywordPlus | Atomic force microscopy | - |
dc.subject.keywordPlus | Efficiency | - |
dc.subject.keywordPlus | Gallium nitride | - |
dc.subject.keywordPlus | Light emitting diodes | - |
dc.subject.keywordPlus | Lighting | - |
dc.subject.keywordPlus | Sapphire | - |
dc.subject.keywordPlus | Semiconducting gallium compounds | - |
dc.subject.keywordPlus | Semiconducting silicon compounds | - |
dc.subject.keywordPlus | Silicon | - |
dc.subject.keywordPlus | Substrates | - |
dc.subject.keywordAuthor | Droop | - |
dc.subject.keywordAuthor | GaN on Si | - |
dc.subject.keywordAuthor | Light emitting diode (LED) | - |
dc.subject.keywordAuthor | vertical LED | - |
dc.identifier.url | https://www.spiedigitallibrary.org/conference-proceedings-of-spie/8123/1/Highly-efficient-InGaN-GaN-blue-LEDs-on-large-diameter-Si/10.1117/12.892441.short | - |
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.
55 Hanyangdeahak-ro, Sangnok-gu, Ansan, Gyeonggi-do, 15588, Korea+82-31-400-4269 sweetbrain@hanyang.ac.kr
COPYRIGHT © 2021 HANYANG UNIVERSITY. ALL RIGHTS RESERVED.
Certain data included herein are derived from the © Web of Science of Clarivate Analytics. All rights reserved.
You may not copy or re-distribute this material in whole or in part without the prior written consent of Clarivate Analytics.