Highly efficient InGaN/GaN blue LEDs on large diameter Si (111) substrates comparable to those on sapphire
- Authors
- Kim, Jun-Youn; Tak, Yongjo; Hong, Hyun-Gi; Chae, Suhee; Lee, Jae Won; Choi, Hyoji; Kim, Jae Kyun; Min, Bokki; Park, Youngsoo; Chung, U-In.; Kim, Minho; Lee, Seongsuk; Cha, Namgoo; Shin, Yoonhee; Sone, Cheolsoo; Kim, Jong-Ryeol; Shim, Jong-In
- Issue Date
- Sep-2011
- Publisher
- SPIE
- Keywords
- Droop; GaN on Si; Light emitting diode (LED); vertical LED
- Citation
- Proceedings of SPIE - The International Society for Optical Engineering, v.8123, pp 1 - 6
- Pages
- 6
- Indexed
- SCIE
SCOPUS
- Journal Title
- Proceedings of SPIE - The International Society for Optical Engineering
- Volume
- 8123
- Start Page
- 1
- End Page
- 6
- URI
- https://scholarworks.bwise.kr/erica/handle/2021.sw.erica/39133
- DOI
- 10.1117/12.892441
- ISSN
- 0277-786X
- Abstract
- Highly efficient InGaN/GaN LEDs grown on 4- and 8-inch silicon substrates comparable to those on sapphire substrates have been successfully demonstrated. High crystalline quality of n-GaN templates on Si were obtained by optimizing combination of stress compensation layers and dislocation reduction layers. The full-width at half-maximum (FWHM) values of GaN (0002) and (10-12) ω-rocking curves of n-GaN templates on 4-inch Si substrates were 205 and 290 arcsec and those on 8-inch Si substrate were 220 and 320 arcsec, respectively. The dislocation densities were measured about 2~3×10 8/cm2 by atomic force microscopy (AFM) after in-situ SiH4 and NH3 treatment. Under the unencapsulated measurement condition of vertical InGaN/GaN LED grown on 4-inch Si substrate, the overall output power of the 1.4×1.4 mm2 chips representing a median performance exceeded 504 mW with the forward voltage of 3.2 V at the driving current of 350 mA. These are the best values among the reported values of blue LEDs grown on Si substrates. The measured internal quantum efficiency was 90 % at injection current of 350 mA. The efficiency droops of vertical LED chips on Si between the maximum efficiency and the efficiency measured at 1A (56.69 A/cm2) input current was 5%. © 2011 Copyright Society of Photo-Optical Instrumentation Engineers (SPIE).
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