Current-voltage characteristics of InGaN/GaN blue light-emitting diodes investigated by photovoltaic parameters
DC Field | Value | Language |
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dc.contributor.author | Oh, Chan-Hyoung | - |
dc.contributor.author | Shim, Jong-In | - |
dc.contributor.author | Shin, Dong-Soo | - |
dc.date.accessioned | 2021-06-22T10:40:56Z | - |
dc.date.available | 2021-06-22T10:40:56Z | - |
dc.date.created | 2021-01-21 | - |
dc.date.issued | 2019-01 | - |
dc.identifier.issn | 0021-4922 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/erica/handle/2021.sw.erica/3914 | - |
dc.description.abstract | We investigate the current-voltage (I-V) characteristics of InGaN/GaN multiple-quantum-well blue light-emitting diodes (LEDs) to analyze the additional voltage drop outside the active region. We theoretically examine and measure the short-circuit current versus the open-circuit voltage (I-SC-V-OC) obtained by photoexcitation and compare them with the I-V obtained by electrical injection. The I-SC-V-OC curve shows the ideal I-V characteristics that do not contain the deviation from the exponential behavior. In the ideality factor obtained by differentiating the I-SC-V-OC curve, the increase of ideality factor due to the series resistance is not observed. The slope of the additional voltage drop Delta V versus current curve shows a nonlinear behavior, indicating that a simple ohmic voltage drop is not sufficient to explain Delta V. From these observations, it is concluded that the carrier recombination in the active region plays a non-negligible role in I-V characteristics of LEDs deviating from the ideal behavior. (C) 2018 The Japan Society of Applied Physics | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | IOP Publishing Ltd | - |
dc.title | Current-voltage characteristics of InGaN/GaN blue light-emitting diodes investigated by photovoltaic parameters | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Shim, Jong-In | - |
dc.contributor.affiliatedAuthor | Shin, Dong-Soo | - |
dc.identifier.doi | 10.7567/1347-4065/aae92f | - |
dc.identifier.scopusid | 2-s2.0-85059856883 | - |
dc.identifier.wosid | 000450635900005 | - |
dc.identifier.bibliographicCitation | Japanese Journal of Applied Physics, v.58, no.1, pp.1 - 6 | - |
dc.relation.isPartOf | Japanese Journal of Applied Physics | - |
dc.citation.title | Japanese Journal of Applied Physics | - |
dc.citation.volume | 58 | - |
dc.citation.number | 1 | - |
dc.citation.startPage | 1 | - |
dc.citation.endPage | 6 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordPlus | Electric resistance | - |
dc.subject.keywordPlus | Gallium compounds | - |
dc.subject.keywordPlus | III-V semiconductors | - |
dc.subject.keywordPlus | Indium compounds | - |
dc.subject.keywordPlus | Light emitting diodes | - |
dc.subject.keywordPlus | Open circuit voltage | - |
dc.subject.keywordPlus | Semiconductor quantum wells | - |
dc.identifier.url | https://iopscience.iop.org/article/10.7567/1347-4065/aae92f | - |
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