Current-voltage characteristics of InGaN/GaN blue light-emitting diodes investigated by photovoltaic parameters
- Authors
- Oh, Chan-Hyoung; Shim, Jong-In; Shin, Dong-Soo
- Issue Date
- Jan-2019
- Publisher
- IOP Publishing Ltd
- Citation
- Japanese Journal of Applied Physics, v.58, no.1, pp.1 - 6
- Indexed
- SCIE
SCOPUS
- Journal Title
- Japanese Journal of Applied Physics
- Volume
- 58
- Number
- 1
- Start Page
- 1
- End Page
- 6
- URI
- https://scholarworks.bwise.kr/erica/handle/2021.sw.erica/3914
- DOI
- 10.7567/1347-4065/aae92f
- ISSN
- 0021-4922
- Abstract
- We investigate the current-voltage (I-V) characteristics of InGaN/GaN multiple-quantum-well blue light-emitting diodes (LEDs) to analyze the additional voltage drop outside the active region. We theoretically examine and measure the short-circuit current versus the open-circuit voltage (I-SC-V-OC) obtained by photoexcitation and compare them with the I-V obtained by electrical injection. The I-SC-V-OC curve shows the ideal I-V characteristics that do not contain the deviation from the exponential behavior. In the ideality factor obtained by differentiating the I-SC-V-OC curve, the increase of ideality factor due to the series resistance is not observed. The slope of the additional voltage drop Delta V versus current curve shows a nonlinear behavior, indicating that a simple ohmic voltage drop is not sufficient to explain Delta V. From these observations, it is concluded that the carrier recombination in the active region plays a non-negligible role in I-V characteristics of LEDs deviating from the ideal behavior. (C) 2018 The Japan Society of Applied Physics
- Files in This Item
-
Go to Link
- Appears in
Collections - COLLEGE OF SCIENCE AND CONVERGENCE TECHNOLOGY > DEPARTMENT OF PHOTONICS AND NANOELECTRONICS > 1. Journal Articles
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.