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Analysis of Time-resolved Photoluminescence of InGaN Quantum Wells Using the Carrier Rate Equation
- Issue Date
- Nov-2010
- Publisher
- IOP Publishing Ltd
- Keywords
- LIFETIMES; EXCITON; EPITAXY; GAN; RECOMBINATION DYNAMICS
- Citation
- Japanese Journal of Applied Physics, v.49, no.11, pp 1 - 5
- Pages
- 5
- Indexed
- SCI
SCIE
SCOPUS
- Journal Title
- Japanese Journal of Applied Physics
- Volume
- 49
- Number
- 11
- Start Page
- 1
- End Page
- 5
- ISSN
- 0021-4922
1347-4065
- Abstract
- A measurement method has been developed than can estimate carrier lifetimes and internal quantum efficiency (IQE) in semiconductor materials at room temperature. From the analysis of time-resolved photoluminescence (TRPL) response based on the carrier rate equation the physical meaning of the TRPL responses is clarified and expressions for carrier lifetimes and IQE are obtained. It is found that the final state of the TRPL response is mainly governed by the non-radiative recombination carrier lifetime. The proposed analysis model is applied to the TRPL measurement results on the InGaN-based quantum-well structures and the non radiative carrier lifetime and IQE of the measured samples are determined. (C) 2010 The Japan Society of Applied Physics
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Related Researcher
- Shim, Jong In
- ERICA 첨단융합대학 (ERICA 반도체·디스플레이공학전공)