Reduction in high reset currents in unipolar resistance switching Pt/SrTiOx/Pt capacitors using acceptor doping

Abstract

The high reset current, I-R, in unipolar resistance switching is an important issue which should be resolved for practical applications in nonvolatile memories. We showed that, during the forming and set processes, the compliance current, I-comp, can work as a crucial parameter to reduce I-R. Doping with Co or Mn can significantly reduce the leakage current in capacitors made using SrTiOx film, opening a larger operation window for I-comp. By decreasing I-Comp with acceptor doping, we could reduce I-R in SrTiOx films by a factor of approximately 20. Our work suggests that the decrease in I-comp by carrier doping could be a viable alternative for reducing I-R in unipolar resistance switching. (C) 2010 American Institute of Physics. [doi:10.1063/1.3486460]