Ni-catalyzed growth of silicon wire arrays for a Schottky diode
DC Field | Value | Language |
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dc.contributor.author | Jee, Sang-Won | - |
dc.contributor.author | Kim, Joondong | - |
dc.contributor.author | Jung, Jin-Young | - |
dc.contributor.author | Um, Han-Don | - |
dc.contributor.author | Moiz, Syed Abdul | - |
dc.contributor.author | Yoo, Bongyoung | - |
dc.contributor.author | Cho, Hyung Koun | - |
dc.contributor.author | Park, Yun Chang | - |
dc.contributor.author | Lee, Jung-Ho | - |
dc.date.accessioned | 2021-06-23T13:02:46Z | - |
dc.date.available | 2021-06-23T13:02:46Z | - |
dc.date.created | 2021-01-21 | - |
dc.date.issued | 2010-07 | - |
dc.identifier.issn | 0003-6951 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/erica/handle/2021.sw.erica/39630 | - |
dc.description.abstract | Vertically grown Si wire arrays were fabricated on a large scale by the Ni-catalyzed vapor-liquid-solid method. A single Si wire has a length of several tens of micrometers with a pure Si stem and a NiSi2 tip. The NiSi2 tip was spontaneously formed on a Si wire due to a slight lattice mismatch relative to Si. Further, this system provides a Schottky contact having a rectifying ratio of similar to 10(2) with a low leakage current of about 2.88 x 10(-10) A. The growth mechanism of vertical Si wires and the performance of a Schottky diode are discussed. (C) 2010 American Institute of Physics. [doi:10.1063/1.3467839] | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | American Institute of Physics | - |
dc.title | Ni-catalyzed growth of silicon wire arrays for a Schottky diode | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Yoo, Bongyoung | - |
dc.contributor.affiliatedAuthor | Lee, Jung-Ho | - |
dc.identifier.doi | 10.1063/1.3467839 | - |
dc.identifier.scopusid | 2-s2.0-77955758520 | - |
dc.identifier.wosid | 000281059200042 | - |
dc.identifier.bibliographicCitation | Applied Physics Letters, v.97, no.4, pp.1 - 3 | - |
dc.relation.isPartOf | Applied Physics Letters | - |
dc.citation.title | Applied Physics Letters | - |
dc.citation.volume | 97 | - |
dc.citation.number | 4 | - |
dc.citation.startPage | 1 | - |
dc.citation.endPage | 3 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordPlus | RECOMBINATION PROPERTIES | - |
dc.subject.keywordPlus | NICKEL | - |
dc.subject.keywordPlus | NANOWIRE | - |
dc.subject.keywordPlus | GOLD | - |
dc.subject.keywordAuthor | arrays | - |
dc.subject.keywordAuthor | catalysis | - |
dc.subject.keywordAuthor | elemental semiconductors | - |
dc.subject.keywordAuthor | leakage currents | - |
dc.subject.keywordAuthor | nickel | - |
dc.subject.keywordAuthor | rectification | - |
dc.subject.keywordAuthor | Schottky barriers | - |
dc.subject.keywordAuthor | Schottky diodes | - |
dc.subject.keywordAuthor | semiconductor growth | - |
dc.subject.keywordAuthor | silicon | - |
dc.identifier.url | https://aip.scitation.org/doi/10.1063/1.3467839 | - |
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