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Ni-catalyzed growth of silicon wire arrays for a Schottky diode
- Authors
- Jee, Sang-Won; Kim, Joondong; Jung, Jin-Young; Um, Han-Don; Moiz, Syed Abdul; Yoo, Bongyoung; Cho, Hyung Koun; Park, Yun Chang; Lee, Jung-Ho
- Issue Date
- Jul-2010
- Publisher
- American Institute of Physics
- Keywords
- arrays; catalysis; elemental semiconductors; leakage currents; nickel; rectification; Schottky barriers; Schottky diodes; semiconductor growth; silicon
- Citation
- Applied Physics Letters, v.97, no.4, pp 1 - 3
- Pages
- 3
- Indexed
- SCI
SCIE
SCOPUS
- Journal Title
- Applied Physics Letters
- Volume
- 97
- Number
- 4
- Start Page
- 1
- End Page
- 3
- ISSN
- 0003-6951
1077-3118
- Abstract
- Vertically grown Si wire arrays were fabricated on a large scale by the Ni-catalyzed vapor-liquid-solid method. A single Si wire has a length of several tens of micrometers with a pure Si stem and a NiSi2 tip. The NiSi2 tip was spontaneously formed on a Si wire due to a slight lattice mismatch relative to Si. Further, this system provides a Schottky contact having a rectifying ratio of similar to 10(2) with a low leakage current of about 2.88 x 10(-10) A. The growth mechanism of vertical Si wires and the performance of a Schottky diode are discussed. (C) 2010 American Institute of Physics. [doi:10.1063/1.3467839]
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Related Researcher
- Yoo, Bong young
- ERICA 첨단융합대학 (ERICA 신소재·반도체공학전공)