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Improved properties of Pt-HfO2 gate insulator-ZnO semiconductor thin film structure by annealing of ZnO layer
- Authors
- Na, Kwang Duk; Kim, Jeong Hwan; Park, Tae Joo; Song, Jaewon; Hwang, Cheol Seong; Choi, Jung-Hae
- Issue Date
- Jul-2010
- Publisher
- Elsevier Sequoia
- Keywords
- Zinc oxide; Hafnium oxide; High-k dielectrics; Oxide semiconductor; Metal-insulator-semiconductor capacitor; Annealing; Sputtering; Atomic layer deposition
- Citation
- Thin Solid Films, v.518, no.18, pp.5326 - 5330
- Indexed
- SCIE
SCOPUS
- Journal Title
- Thin Solid Films
- Volume
- 518
- Number
- 18
- Start Page
- 5326
- End Page
- 5330
- ISSN
- 0040-6090
- Abstract
- Metal-insulator-semiconductor capacitors were fabricated with sputtered ZnO and atomic layer deposited HfO2 as the semiconductor and gate dielectric layers, respectively. From the capacitance-voltage measurements, it was confirmed that pre-deposition annealing of the sputtered ZnO layer at 300 degrees C in air greatly decreased the interfacial trap density (similar to 2 x 10(12) cm(-2) eV(-1)), X-ray photoelectron spectroscopy showed a decrease in the OH bonds adsorbed on the ZnO surface after pre-deposition annealing, which improved the interface property. A very small capacitance equivalent thickness of 1.3 nm was achieved, which decreased the operation voltage (<5V) of the device significantly. (C) 2010 Elsevier B.V. All rights reserved.
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Related Researcher
- Park, Tae Joo
- ERICA 공학대학 (DEPARTMENT OF MATERIALS SCIENCE AND CHEMICAL ENGINEERING)