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I-V characteristics of a vertical single Ni nanowire by voltage-applied atomic force microscopy
- Authors
- Choi, D. S.; Rheem, Y.; Yoo, B.; Myung, N. V.; Kim, Y. K.
- Issue Date
- Jul-2010
- Publisher
- Elsevier
- Keywords
- Single Ni nanowire; Voltage-applied atomic force microscopy; Electrical resistance
- Citation
- Current Applied Physics, v.10, no.4, pp 1037 - 1040
- Pages
- 4
- Indexed
- SCI
SCIE
SCOPUS
KCI
- Journal Title
- Current Applied Physics
- Volume
- 10
- Number
- 4
- Start Page
- 1037
- End Page
- 1040
- ISSN
- 1567-1739
1878-1675
- Abstract
- We report the measurement of the electrical resistivity of a vertical single Ni nanowire. A vertical array of Ni nanowires was fabricated on a Si substrate by electrodeposition using a nanoporous alumina template. The Ni nanowires possessed a face-centered-cubic polycrystalline structure. A voltage-applied atomic force microscope was used to make a nanometer-scale point contact on top of the vertical grown single Ni nanowire. The measured resistance was 1.1 M Omega for a nanowire with length of 3 mu m and diameter of 20 nm. (C) 2009 Elsevier B.V. All rights reserved.
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Related Researcher
- Yoo, Bong young
- ERICA 첨단융합대학 (ERICA 신소재·반도체공학전공)