Structural Parameter Dependence of Light Extraction Efficiency in Photonic Crystal InGaN Vertical Light-Emitting Diode Structures
DC Field | Value | Language |
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dc.contributor.author | Ryu, Han-Youl | - |
dc.contributor.author | Shim, Jong-In | - |
dc.date.accessioned | 2021-06-23T13:06:41Z | - |
dc.date.available | 2021-06-23T13:06:41Z | - |
dc.date.issued | 2010-05 | - |
dc.identifier.issn | 0018-9197 | - |
dc.identifier.issn | 1558-1713 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/erica/handle/2021.sw.erica/39848 | - |
dc.description.abstract | Light extraction efficiency (LEE) in thin-film InGaN vertical light-emitting diode (LED) structures with photonic crystal patterns is studied using the three-dimensional finite-difference time-domain simulation. We systematically investigate the dependence of LEE on various structural parameters of photonic crystal vertical LEDs such as the thickness of the p-GaN and n-GaN layers, and air-hole depth and size. It is found that high LEE of > 80% is obtainable from unencapsulated photonic crystal LEDs for a wide range of structural parameters. In particular, higher LEE is observed for the structures with relatively long-period photonic crystal patterns and possible mechanisms for the large enhancement of LEE are discussed. | - |
dc.format.extent | 7 | - |
dc.language | 영어 | - |
dc.language.iso | ENG | - |
dc.publisher | Institute of Electrical and Electronics Engineers | - |
dc.title | Structural Parameter Dependence of Light Extraction Efficiency in Photonic Crystal InGaN Vertical Light-Emitting Diode Structures | - |
dc.type | Article | - |
dc.publisher.location | 미국 | - |
dc.identifier.doi | 10.1109/JQE.2009.2035933 | - |
dc.identifier.scopusid | 2-s2.0-77649305386 | - |
dc.identifier.wosid | 000275026200003 | - |
dc.identifier.bibliographicCitation | IEEE Journal of Quantum Electronics, v.46, no.5, pp 714 - 720 | - |
dc.citation.title | IEEE Journal of Quantum Electronics | - |
dc.citation.volume | 46 | - |
dc.citation.number | 5 | - |
dc.citation.startPage | 714 | - |
dc.citation.endPage | 720 | - |
dc.type.docType | Article | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | sci | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Engineering | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalResearchArea | Optics | - |
dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
dc.relation.journalWebOfScienceCategory | Quantum Science & Technology | - |
dc.relation.journalWebOfScienceCategory | Optics | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordPlus | EMISSION | - |
dc.subject.keywordPlus | ENHANCEMENT | - |
dc.subject.keywordPlus | BLUE | - |
dc.subject.keywordAuthor | Light-emitting Diode | - |
dc.subject.keywordAuthor | InGaN materials | - |
dc.subject.keywordAuthor | photonic crystal | - |
dc.subject.keywordAuthor | light extraction efficiency | - |
dc.subject.keywordAuthor | finite-difference time-domain (FDTD) method | - |
dc.identifier.url | https://ieeexplore.ieee.org/document/5420234 | - |
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