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Structural Parameter Dependence of Light Extraction Efficiency in Photonic Crystal InGaN Vertical Light-Emitting Diode Structures
- Authors
- Ryu, Han-Youl; Shim, Jong-In
- Issue Date
- May-2010
- Publisher
- Institute of Electrical and Electronics Engineers
- Keywords
- Light-emitting Diode; InGaN materials; photonic crystal; light extraction efficiency; finite-difference time-domain (FDTD) method
- Citation
- IEEE Journal of Quantum Electronics, v.46, no.5, pp 714 - 720
- Pages
- 7
- Indexed
- SCI
SCIE
SCOPUS
- Journal Title
- IEEE Journal of Quantum Electronics
- Volume
- 46
- Number
- 5
- Start Page
- 714
- End Page
- 720
- ISSN
- 0018-9197
1558-1713
- Abstract
- Light extraction efficiency (LEE) in thin-film InGaN vertical light-emitting diode (LED) structures with photonic crystal patterns is studied using the three-dimensional finite-difference time-domain simulation. We systematically investigate the dependence of LEE on various structural parameters of photonic crystal vertical LEDs such as the thickness of the p-GaN and n-GaN layers, and air-hole depth and size. It is found that high LEE of > 80% is obtainable from unencapsulated photonic crystal LEDs for a wide range of structural parameters. In particular, higher LEE is observed for the structures with relatively long-period photonic crystal patterns and possible mechanisms for the large enhancement of LEE are discussed.
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Related Researcher
- Shim, Jong In
- ERICA 첨단융합대학 (ERICA 반도체·디스플레이공학전공)