Ultra-small Form-Factor Helix on Pad-Type Stage-Bypass WCDMA Tx Power Amplifier Using a Chip-Stacking Technique and a Multilayer Substrate
- Authors
- Yoo, Changhyun; Kim, Junghyun
- Issue Date
- Apr-2010
- Publisher
- WILEY
- Keywords
- Chip-stacking; efficiency; HoP-iPD; multilayer substrate; small form-factor; stage-bypass PA
- Citation
- ETRI JOURNAL, v.32, no.2, pp.327 - 329
- Indexed
- SCIE
SCOPUS
KCI
- Journal Title
- ETRI JOURNAL
- Volume
- 32
- Number
- 2
- Start Page
- 327
- End Page
- 329
- URI
- https://scholarworks.bwise.kr/erica/handle/2021.sw.erica/39914
- DOI
- 10.4218/etrij.10.0209.0486
- ISSN
- 1225-6463
- Abstract
- A fully integrated small form-factor HBT power amplifier (PA) was developed for UMTS Tx applications. For practical use, the PA was implemented with a well configured bottom dimension, and a CMOS control IC was added to enable/disable the HBT PA. By using helix-on-pad integrated passive device output matching, a chip-stacking technique in the assembly of the CMOS IC, and embedding of the bulky inductive lines in a multilayer substrate, the module size was greatly reduced to 2 mm x 2.2 mm. A stage-bypass technique was used to enhance the efficiency of the PA. The PA showed a low idle current of about 20 mA and a PAE of about 15% at an output power of 16 dBm, while showing good linearity over the entire operating power range.
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Collections - COLLEGE OF ENGINEERING SCIENCES > SCHOOL OF ELECTRICAL ENGINEERING > 1. Journal Articles
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