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Ultra-small Form-Factor Helix on Pad-Type Stage-Bypass WCDMA Tx Power Amplifier Using a Chip-Stacking Technique and a Multilayer Substrate

Authors
Yoo, ChanghyunKim, Junghyun
Issue Date
Apr-2010
Publisher
WILEY
Keywords
Chip-stacking; efficiency; HoP-iPD; multilayer substrate; small form-factor; stage-bypass PA
Citation
ETRI JOURNAL, v.32, no.2, pp.327 - 329
Indexed
SCIE
SCOPUS
KCI
Journal Title
ETRI JOURNAL
Volume
32
Number
2
Start Page
327
End Page
329
URI
https://scholarworks.bwise.kr/erica/handle/2021.sw.erica/39914
DOI
10.4218/etrij.10.0209.0486
ISSN
1225-6463
Abstract
A fully integrated small form-factor HBT power amplifier (PA) was developed for UMTS Tx applications. For practical use, the PA was implemented with a well configured bottom dimension, and a CMOS control IC was added to enable/disable the HBT PA. By using helix-on-pad integrated passive device output matching, a chip-stacking technique in the assembly of the CMOS IC, and embedding of the bulky inductive lines in a multilayer substrate, the module size was greatly reduced to 2 mm x 2.2 mm. A stage-bypass technique was used to enhance the efficiency of the PA. The PA showed a low idle current of about 20 mA and a PAE of about 15% at an output power of 16 dBm, while showing good linearity over the entire operating power range.
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COLLEGE OF ENGINEERING SCIENCES > SCHOOL OF ELECTRICAL ENGINEERING > 1. Journal Articles

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KIM, JUNG HYUN
ERICA 공학대학 (SCHOOL OF ELECTRICAL ENGINEERING)
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