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Relationship between thermal and luminance distributions in high-power lateral GaN/InGaN light-emitting diodes
- Authors
- Han, Dongpyo; Shim, Jongin; Shin, Dongsoo
- Issue Date
- Mar-2010
- Publisher
- Institute of Electrical Engineers
- Citation
- Electronics Letters, v.46, no.6, pp 437 - 439
- Pages
- 3
- Indexed
- SCI
SCIE
SCOPUS
- Journal Title
- Electronics Letters
- Volume
- 46
- Number
- 6
- Start Page
- 437
- End Page
- 439
- ISSN
- 0013-5194
1350-911X
- Abstract
- The relationship between the thermal and luminance distributions in high-power lateral GaN/InGaN light-emitting diodes (LEDs) is demonstrated. By using a three-dimensional electrical circuit model and experimentally measured thermal and luminance images of the LED chips, it is shown that thermal and luminance distributions have close correlation and that uniform current density is essential to improve the thermal and luminance properties of LED chips.
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Related Researcher
- Shim, Jong In
- ERICA 첨단융합대학 (ERICA 반도체·디스플레이공학전공)