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Bipolar Resistive Switching Characteristics of Cu/TaOx/Pt Structures
- Authors
- Cha, Dongjae; Lee, Sungjoo; Jung, J.; An, Ilsin; Kim, Dong Wook
- Issue Date
- Mar-2010
- Publisher
- 한국물리학회
- Keywords
- Ionic memory switching; Tantalum oxide; Sputtering
- Citation
- Journal of the Korean Physical Society, v.56, no.3, pp 846 - 850
- Pages
- 5
- Indexed
- SCI
SCIE
SCOPUS
KCI
- Journal Title
- Journal of the Korean Physical Society
- Volume
- 56
- Number
- 3
- Start Page
- 846
- End Page
- 850
- ISSN
- 0374-4884
1976-8524
- Abstract
- We investigated the electrical properties of Cu/TaOx/Pt structures, which were prepared by RF-sputtering at room temperature. Spectroscopic ellipsometry (SE) measurements revealed that the refractive indices of the TaOx thin films decreased with increasing oxygen-to-argon gas ratio during the growth. The transport; analyses based on the Poole-Frenkel emission model yielded the dielectric constant of the TaOx layers; the results were consistent with the SE results. The Cu/TaOx/Pt structures exhibited bipolar resistive switching (RS), and less-oxidized samples showed a more reliable RS behavior than more-oxidized ones. The high-to-low resistance ratio was nearly 10(3), and the switching voltage was less than 1 V.
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